1320 nm Light Source From Deuterium Treated Silicon KALEM ŞEREF IEEE Open Journal of Nanotechnology Cilt.1 Sayf.- 2020 http://dx.doi.org/10.1109/ojnano.2020.3025167
Time-resolved radiative recombination in black silicon KALEM ŞEREF Springer Science and Business Media LLC Cilt.34 Sayf.- 2023 http://dx.doi.org/10.1007/s10854-023-10127-0
Si nanopillar arrays as possible electronic device platforms KALEM ŞEREF Solid-State Electronics Cilt.183 Sayf.- 2021 http://dx.doi.org/10.1016/j.sse.2021.108102
Enhanced electron spin polarization in photoemission from thin GaAs KALEM ŞEREF Applied Physics Letters Cilt.55 Sayf.- 1989 http://dx.doi.org/10.1063/1.102236
New silicon hydrogen infrared vibrational band associated to HSiCl configurations in an amorphous silicon matrix : Green's function theory approach KALEM ŞEREF Physica B+C Cilt. Sayf.- 1983 http://dx.doi.org/10.1016/0378-4363(83)90680-0
Infrared spectroscopy of hydrogenated and chlorinated amorphous silicon KALEM ŞEREF Philosophical Magazine B Cilt.53 Sayf.- 1986 http://dx.doi.org/10.1080/13642818608240664
Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment KALEM ŞEREF Applied Physics A Cilt.112 Sayf.- 2013 http://dx.doi.org/10.1007/s00339-013-7783-3
Transport properties of InAs epilayers grown by molecular beam epitaxy KALEM ŞEREF Semiconductor Science and Technology Cilt.5 Sayf.- 1990 http://dx.doi.org/10.1088/0268-1242/5/3s/044
Transport properties of hydrogenated and chlorinated amorphous silicon Correlation with infrared transmission spectra KALEM ŞEREF Philosophical Magazine B Cilt.50 Sayf.- 1984 http://dx.doi.org/10.1080/13642818408238873
Optical characterization of dislocation free Ge and GeOI wafers KALEM ŞEREF Materials Science in Semiconductor Processing Cilt.9 Sayf.- 2006 http://dx.doi.org/10.1016/j.mssp.2006.08.035
Controlled thinning and surface smoothening of silicon nanopillars KALEM ŞEREF Nanotechnology Cilt.20 Sayf.- 2009 http://dx.doi.org/10.1088/0957-4484/20/44/445303
Hydrogenation of InAs on GaAs heterostructures KALEM ŞEREF Journal of Applied Physics Cilt.70 Sayf.- 1991 http://dx.doi.org/10.1063/1.349558
Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching KALEM ŞEREF Applied Surface Science Cilt.236 Sayf.- 2004 http://dx.doi.org/10.1016/j.apsusc.2004.05.008
Optical and electrical properties of chlorinated and hydrogenated amorphous silicon prepared by glow discharge KALEM ŞEREF Journal of Non-Crystalline Solids Cilt.51 Sayf.- 1982 http://dx.doi.org/10.1016/0022-3093(82)90148-x
Molecular\u2010beam epitaxial growth and transport properties of InAs epilayers KALEM ŞEREF Journal of Applied Physics Cilt.66 Sayf.- 1989 http://dx.doi.org/10.1063/1.344141
Black silicon with high density and high aspect ratio nanowhiskers KALEM ŞEREF Nanotechnology Cilt.22 Sayf.- 2011 http://dx.doi.org/10.1088/0957-4484/22/23/235307
Optical and structural investigation of stain\u2010etched silicon KALEM ŞEREF Applied Physics Letters Cilt.67 Sayf.- 1995
Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy KALEM ŞEREF Applied Physics Letters Cilt. Sayf.- 1988 https://doi.org/10.1063/1.100031
Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates KALEM ŞEREF Journal of Applied Physics Cilt. Sayf.- 1989 http://dx.doi.org/10.1063/1.343339
Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures KALEM ŞEREF Thin Solid Films Cilt. Sayf.- 2010 https://doi.org/10.1016/j.tsf.2009.08.021
Possibility of fabricating light-emitting porous silicon from gas phase etchants KALEM ŞEREF Optics Express Cilt. Sayf.- 2000 https://doi.org/10.1364/OE.6.000007
Growth and transport properties of InAs epilayers on GaAs KALEM ŞEREF Applied Physics Letters Cilt. Sayf.- 1988 https://doi.org/10.1063/1.99938
Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates KALEM ŞEREF Appl. Phys. Lett. Cilt. Sayf.- 1988 https://doi.org/10.1063/1.99857
Transformation of germanium to fluogermanates KALEM ŞEREF Applied Physics A Cilt.98 Sayf.- 2009 http://dx.doi.org/10.1007/s00339-009-5411-z
Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment KALEM ŞEREF Applied Physics-A Cilt.112 Sayf.- 2013
Controlled thinning and surface smoothening of silicon nanopillars KALEM ŞEREF Nanotechnology Cilt.20 Sayf.- 2009 https://doi.org/10.1088/0957-4484/20/44/445303
Optical investigation of a-Si:H/a-SiNx:H superlattices KALEM ŞEREF Physical Review B Cilt.37 Sayf.8837- 1988 http://dx.doi.org/10.1103/physrevb.37.8837
Si nanopillar arrays as possible electronic device platforms KALEM ŞEREF Solid State Electronics Cilt. Sayf.- 2021 https://doi.org/10.1016/j.sse.2021.108102
Formation of germanates on germanium by chemical vapor treatment KALEM ŞEREF Thin Solid Films Cilt.518 Sayf.- 2010
1320 nm light source from deuterium treated silicon KALEM ŞEREF IEEE Open Journal Nanotechnology Cilt. Sayf.- 2020
Photoluminescence from silicon nanoparticles embedded in ammonium silicon hexafluoride KALEM ŞEREF Nanotechnology Cilt.21 Sayf.- 2010 http://dx.doi.org/10.1088/0957-4484/21/43/435701
Black silicon with high density and high aspect ratio nanowhiskers KALEM ŞEREF Nanotechnology Cilt.22 Sayf.- 2011
Defect studies in strain-relaxed Si$_{1-x}$Ge$_{x}$ alloys KALEM ŞEREF TURKISH JOURNAL OF PHYSICS Cilt.37 Sayf.- 2013 http://dx.doi.org/10.3906/fiz-1212-1
Ellipsometry studies of Si/Ge superlattices with embedded Ge dots KALEM ŞEREF Applied Physics A Cilt.112 Sayf.- 2013 http://dx.doi.org/10.1007/s00339-013-7781-5
Bildiriler (Uluslararası)
Annealing effects on the structure of Ge-Sb-Te alloys KALEM ŞEREF 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Cilt. Sayf.- 09.03.2021 10.1109/EUROSOI-ULIS49407.2020.9365326
Energy harvesting power management circuit design in 22nm FDSOI technology KALEM ŞEREF EUROSOI-ULIS 2018 Cilt. Sayf.- 07.05.2018 10.1109/ULIS.2018.8354748
Excited Carrier Recombination in Black Silicon KALEM ŞEREF 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Cilt. Sayf.- 09.03.2021 http://dx.doi.org/10.1109/eurosoi-ulis49407.2020.9365291
Oxides based resistive switching memories
KALEM ŞEREF SPIE PHOTONICS WEST 2021 Cilt. Sayf.-
Bildiriler (Ulusal)
Design of an FPGA-based RRAM parameter measurement platform KALEM ŞEREF 2018 IEEE International Conference on Industrial Technology (ICIT) Cilt. Sayf.- 30.04.2018 10.1109/ICIT.2018.8352386
